A Hall sensor is a magnetic field sensor made based on the Hall effect. The Hall effect is a type of magneto electric effect, which was discovered by A.H. Hall (1855-1938) in 1879 while studying the conductive mechanism of metals. Later, it was discovered that semiconductors, conductive fluids, and other materials also have this effect, and the Hall effect of semiconductors is much stronger than that of metals. Various Hall elements made using this phenomenon are widely used in industrial automation technology, detection technology, and information processing. The Hall effect is a fundamental method for studying the properties of semiconductor materials. The Hall coefficient measured through Hall effect experiments can determine important parameters such as the conductivity type, carrier concentration, and carrier mobility of semiconductor materials.

Single channel fast response DC current sensor - B23

Hall devices have many advantages, such as sturdy structure, small size, light weight, long lifespan, easy installation, low power consumption, high frequency (up to 1MHz), vibration resistance, and resistance to pollution or corrosion from dust, oil, water vapor, and salt spray.

Hall linear devices have high accuracy and good linearity; Hall switch devices have no contacts, no wear, clear output waveform, no jitter, no rebound, and high position repeatability accuracy (up to μ m level). The working temperature range of Hall devices with various compensation and protection measures is wide, reaching -55 ℃ to 150 ℃.

According to their functions, Hall devices can be divided into Hall linear devices and Hall switching devices. The former outputs analog signals, while the latter outputs digital signals. Through it, many non electric and non-magnetic physical quantities such as force, torque, pressure, stress, position, displacement, velocity, acceleration, angle, angular velocity, number of revolutions, rotational speed, and the time when the working state changes are converted into electrical quantities for detection and control.

Hall elements have high measurement sensitivity, small size, and are easy to move and locate in a magnetic field. They can be used to measure the magnetic field at a certain point and in a gap. This effect can also be used to determine the main parameters of semiconductor materials, such as conductivity type, carrier concentration, and mobility.

Due to these characteristics of Hall sensors, they play an extremely important role in scientific research and production. Therefore, Hall sensors are a rare electronic component, and people can choose the suitable Hall current sensor according to their own needs.